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EO solid-state laser EF20P-QSF

I-EO eqinile-imeko ye-laser EF20P-QSF

I-EO EF20P-QSF yilaser enamandla kakhulu, ephindaphindayo-inqanaba eliphezulu le-nanosecond Q-switched esebenzisa itekhnoloji ye-semiconductor-pumped solid-state laser (DPSS) kwaye ifanele ukwenziwa komatshini ngokuchanekileyo.

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I-EO (EdgeWave) laser EF20P-QSF umsebenzi kunye neenkcukacha zomgaqo

I-EO EF20P-QSF yi-high-power, i-high-repetition-rate-nanosecond Q-switched laser esebenzisa i-semiconductor-pumped solid-state laser (DPSS) iteknoloji kwaye ifanelekile ukuchaneka kwe-machining, ukuphawula i-laser, i-LIBS (i-laser-induced breakdown spectroscopy) kunye nezicelo zophando lwezesayensi.

1. Imisebenzi engundoqo

(1) Amandla aphezulu kunye namandla aphezulu e-pulse

Amandla omyinge: 20 W (@1064 nm).

Amandla e-pulse enye: ukuya kuthi ga kwi-1 mJ (kuxhomekeke kwisantya sokuphindaphinda).

Izinga lokuphindaphinda: 1–200 kHz (enokulungiswa), ukuhlangabezana neemfuno ezahlukeneyo zokucwangcisa.

(2) Umgangatho ogqwesileyo we-beam

M² <1.3 (kufutshane nomda we-diffraction), ilungele ukwenziwa kwe-micromachining ecolekileyo.

Umqa weGaussian, indawo encinci yokugxila, ukuxinana kwamandla aphezulu.

(3) Ulawulo lwe-pulse oluguquguqukayo

Ububanzi be-pulse obulungiswayo: 10-50 ns (ixabiso eliqhelekileyo), ukunyusa umphumo wokucubungula izinto ezahlukeneyo.

I-trigger yangaphandle: ixhasa ukumodareyitha kwe-TTL/PWM, ehambelanayo neenkqubo ezizenzekelayo.

(4) Ukuthembeka komgangatho woshishino

Uyilo lwemeko eqinileyo (ukumpompa okungenazibane), ubomi bexesha> iiyure ezingama-20,000.

Ukupholisa umoya / ukupholisa amanzi ngokuzikhethela, ukulungelelanisa kwiindawo ezahlukeneyo zokusebenza.

2. Umgaqo wokusebenza

I-EF20P-QSF isekwe kwitekhnoloji yelaser ye-Q-switched DPSS, kwaye eyona nkqubo iphambili imi ngolu hlobo lulandelayo:

(1) Ukumpompa kweSemiconductor (i-LD Pumping)

Iimpompo ze-Laser diode (LD) i-Nd:YVO₄ okanye i-Nd:YAG crystal ukuvuselela iiyoni zomhlaba ezinqabileyo (Nd³⁺) kumanqanaba amandla anokumetastable.

(2) Q-utshintshe i-pulse generation

I-Acousto-optic Q-switching (AO Q-Switch) okanye i-electro-optic Q-switching (EO Q-Switch) itshintshe ngokukhawuleza i-resonant cavity ixabiso le-Q, kwaye ikhuphe i-pulses ye-nanosecond enamandla emva kokuqokelela amandla.

(3) Ukuguqulwa kobude bobude (ukhetho)

I-synchronous frequency generation (SHG) kunye ne-triple frequency generation (THG) zenziwa ngeekristale ezingabonakaliyo (ezifana ne-LBO, i-KTP), kwaye imveliso yi-532 nm (ukukhanya okuluhlaza) okanye i-355 nm (ukukhanya kwe-ultraviolet).

(4) Ukubunjwa kweBeam kunye nemveliso

Isiphumo siphuculwe yi-expander ye-boam / i-lens egxininisekile ukuqinisekisa ukuxinana kwamandla aphezulu kunye nokuchaneka kokucubungula.

3. Usetyenziso oluqhelekileyo

(1) Umatshini ochanekileyo

Ukusika izinto ezinqabileyo (iglasi, isafire, i-ceramics).

Micro drilling (PCB, fuel injection, electronic components).

(2) Ukumakishwa kweLaser

Ukumakishwa kwentsimbi ephezulu (insimbi engenasici, i-aluminium alloy).

Iplastiki / i-ceramic engraving (akukho monakalo we-thermal).

(3) Uphando lwezenzululwazi kunye novavanyo

I-LIBS (uhlalutyo olusisiseko): iplasma ephezulu yokuvuselela amandla epulse.

Irada yeLaser (LIDAR): ukubonwa kwe-atmospheric, ukusuka.

(4) Unyango kunye nobuhle

Ukunyangwa kwesikhumba (ukususwa kwe-pigmentation, ukususwa kwe tattoo).

Unyango lwamazinyo oluqinileyo (ukukhutshwa okuchanekileyo).

4. Iiparamitha zobugcisa (amaxabiso aqhelekileyo)

Iiparamitha EF20P-QSF (1064 nm) EF20P-QSF (532 nm)

Ubude bobude 1064 nm 532 nm (izihlandlo ezibini)

Amandla aphakathi 20 W 10 W

I-pulse yamandla enye 1 mJ (@20 kHz) 0.5 mJ (@20 kHz)

Umlinganiselo wokuphindaphinda 1–200 kHz 1–200 kHz

Ububanzi be-Pulse 10-50 ns 8-30 ns

Umgangatho weBeam (M²) <1.3 <1.5

Indlela yokupholisa Ukupholisa umoya/ukupholisa amanzi Ukupholisa umoya/ukupholisa amanzi

5. Ukuthelekiswa kweemveliso ezikhuphisanayo (EF20P-QSF vs. fiber / CO₂ laser)

Iimpawu ze-EF20P-QSF (DPSS) I-Fiber laser CO₂ laser

Ubude bobude 1064/532/355 nm 1060–1080 nm 10.6 μm

I-Pulse energy Iphezulu (inqanaba le-mJ) Ngasezantsi (µJ–mJ) Iphakamile (kodwa inempembelelo enkulu yobushushu)

Umgangatho weBeam M² <1.3 M² <1.1 M² ~1.2–2

Izinto ezisetyenziswayo Intsimbi/engeyiyo isinyithi esekwe kwintsimbi engeyiyo eyentsimbi (iplastiki/ephilayo)

Iimfuno zogcino Phantsi (akukho kumpompelwa kwesibane) Phantsi kakhulu Kufuneka uhlengahlengise igesi/ilensi

6. Isishwankathelo seenzuzo

Amandla aphezulu e-pulse: afanelekile ukusetyenzwa kwempembelelo ephezulu (ukugaya, i-LIBS).

Umgangatho ogqwesileyo we-beam: ukuchaneka kwe-micromachining (M²<1.3).

Uzinzo lwe-Industrial-grade: uyilo oluqinileyo-lonke, ubomi obude, ukugcinwa ngaphandle.

Amaza amaninzi akhoyo: 1064 nm/532 nm/355 nm, alungele izinto ezahlukeneyo.

Amashishini asebenzayo: ukwenziwa kwe-elektroniki, iimvavanyo zophando lwezenzululwazi, ubuhle bezonyango, i-aerospace, njl.

EO Fiber Pulse Laser EF20P-QSF

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