EO ସଲିଡ୍-ଷ୍ଟେଟ୍ ଲେଜର୍ EF20P-QSF

EO (EdgeWave) laser EF20P-QSF function and principle details

EO EF20P-QSF is a high-power, high-repetition-rate nanosecond Q-switched laser that uses semiconductor-pumped solid-state laser (DPSS) technology and is suitable for precision machining, laser marking, LIBS (laser-induced breakdown spectroscopy) and scientific research applications.

1. ମୁଖ୍ୟ କାର୍ଯ୍ୟଗୁଡ଼ିକ

(୧) ଉଚ୍ଚ ଶକ୍ତି ଏବଂ ଉଚ୍ଚ ସ୍ପନ୍ଦନ ଶକ୍ତି

Average power: 20 W (@1064 nm).

Single pulse energy: up to 1 mJ (depending on the repetition rate).

Repetition rate: 1–200 kHz (adjustable), to meet different processing requirements.

(2) ଉତ୍କୃଷ୍ଟ ବିମ୍ ଗୁଣବତ୍ତା

M² < 1.3 (close to the diffraction limit), suitable for fine micromachining.

Gaussian beam, small focus spot, high energy density.

(3) ନମନୀୟ ପଲ୍ସ ନିୟନ୍ତ୍ରଣ

Adjustable pulse width: 10–50 ns (typical value), to optimize the processing effect of different materials.

External trigger: supports TTL/PWM modulation, compatible with automation systems.

(୪) ଶିଳ୍ପ-ଗ୍ରେଡ୍ ନିର୍ଭରଯୋଗ୍ୟତା

All-solid-state design (lamp-free pumping), life span >20,000 hours.

Air cooling/water cooling optional, adapt to different working environments.

2. Working principle

EF20P-QSF is based on Q-switched DPSS laser technology, and the core process is as follows:

(1) Semiconductor pumping (LD Pumping)

Laser diode (LD) pumps Nd:YVO₄ or Nd:YAG crystal to excite rare earth ions (Nd³⁺) to metastable energy levels.

(2) Q-switched pulse generation

Acousto-optic Q-switching (A-O Q-Switch) or electro-optic Q-switching (E-O Q-Switch) quickly switches the resonant cavity Q value, and releases high-power nanosecond pulses after accumulating energy.

(3) Wavelength conversion (optional)

Synchronous frequency generation (SHG) and triple frequency generation (THG) are performed through nonlinear crystals (such as LBO, KTP), and the output is 532 nm (green light) or 355 nm (ultraviolet light).

(4) Beam shaping & output

The output is optimized by a beam expander/focusing lens to ensure high energy density and processing accuracy.

3. ସାଧାରଣ ପ୍ରୟୋଗଗୁଡ଼ିକ

(1) Precision machining

Cutting of brittle materials (glass, sapphire, ceramics).

Micro drilling (PCB, fuel injector, electronic components).

(2) Laser marking

High contrast metal marking (stainless steel, aluminum alloy).

Plastic/ceramic engraving (no thermal damage).

(3) ବୈଜ୍ଞାନିକ ଗବେଷଣା ଏବଂ ପରୀକ୍ଷଣ

LIBS (elemental analysis): high pulse energy excitation plasma.

Laser radar (LIDAR): atmospheric detection, ranging.

(୪) ଚିକିତ୍ସା ଏବଂ ସୌନ୍ଦର୍ଯ୍ୟ

Skin treatment (pigmentation removal, tattoo removal).

Dental hard tissue treatment (precision ablation).

4. Technical parameters (typical values)

Parameters EF20P-QSF (1064 nm) EF20P-QSF (532 nm)

Wavelength 1064 nm 532 nm (double frequency)

Average power 20 W 10 W

Single pulse energy 1 mJ (@20 kHz) 0.5 mJ (@20 kHz)

Repetition rate 1–200 kHz 1–200 kHz

ପଲ୍ସ ପ୍ରସ୍ଥ ୧୦–୫୦ ନିସେକେଣ୍ଡ ୮–୩୦ ନିସେକେଣ୍ଡ

ବିମ୍ ଗୁଣବତ୍ତା (M²) <1.3 <1.5

ଶୀତଳୀକରଣ ପଦ୍ଧତି ବାୟୁ ଶୀତଳୀକରଣ/ପାଣି ଶୀତଳୀକରଣ ବାୟୁ ଶୀତଳୀକରଣ/ପାଣି ଶୀତଳୀକରଣ

5. Comparison of competing products (EF20P-QSF vs. fiber/CO₂ laser)

Features EF20P-QSF (DPSS) Fiber laser CO₂ laser

Wavelength 1064/532/355 nm 1060–1080 nm 10.6 μm

ପଲ୍ସ ଶକ୍ତି ଉଚ୍ଚ (mJ ସ୍ତର) ନିମ୍ନ (µJ–mJ) ଉଚ୍ଚ (କିନ୍ତୁ ବଡ଼ ତାପଜ ପ୍ରଭାବ ସହିତ)

ବିମ୍ ଗୁଣବତ୍ତା M² <1.3 M² <1.1 M² ~1.2–2

ପ୍ରଯୁଜ୍ୟ ସାମଗ୍ରୀ ଧାତୁ/ଅଣ-ଧାତୁ ଧାତୁ-ଆଧାରିତ ଧାତୁହୀନ (ପ୍ଲାଷ୍ଟିକ୍/ଜୈବିକ)

Maintenance requirements Low (no lamp pumping) Very low Need to adjust gas/lens

6. Advantages summary

High pulse energy: suitable for high impact processing (drilling, LIBS).

ଉତ୍କୃଷ୍ଟ ବିମ୍ ଗୁଣବତ୍ତା: ସଠିକ୍ ମାଇକ୍ରୋମେସିନିଂ (M²<1.3)।

ଶିଳ୍ପ-ଗ୍ରେଡ୍ ସ୍ଥିରତା: ସମ୍ପୂର୍ଣ୍ଣ କଠିନ-ଅବସ୍ଥା ଡିଜାଇନ୍, ଦୀର୍ଘ ଜୀବନ, ​​ରକ୍ଷଣାବେକ୍ଷଣ-ମୁକ୍ତ।

Multiple wavelengths available: 1064 nm/532 nm/355 nm, suitable for different materials.

Applicable industries: electronic manufacturing, scientific research experiments, medical beauty, aerospace, etc.