EO tahkislaser EF20P-QSF

EO (EdgeWave) laser EF20P-QSF function and principle details

EO EF20P-QSF is a high-power, high-repetition-rate nanosecond Q-switched laser that uses semiconductor-pumped solid-state laser (DPSS) technology and is suitable for precision machining, laser marking, LIBS (laser-induced breakdown spectroscopy) and scientific research applications.

1. Põhifunktsioonid

(1) Suur võimsus ja kõrge impulsienergia

Average power: 20 W (@1064 nm).

Single pulse energy: up to 1 mJ (depending on the repetition rate).

Repetition rate: 1–200 kHz (adjustable), to meet different processing requirements.

(2) Suurepärane kiire kvaliteet

M² < 1.3 (close to the diffraction limit), suitable for fine micromachining.

Gaussian beam, small focus spot, high energy density.

(3) Paindlik impulsi juhtimine

Adjustable pulse width: 10–50 ns (typical value), to optimize the processing effect of different materials.

External trigger: supports TTL/PWM modulation, compatible with automation systems.

(4) Tööstuslik töökindlus

All-solid-state design (lamp-free pumping), life span >20,000 hours.

Air cooling/water cooling optional, adapt to different working environments.

2. Working principle

EF20P-QSF is based on Q-switched DPSS laser technology, and the core process is as follows:

(1) Semiconductor pumping (LD Pumping)

Laser diode (LD) pumps Nd:YVO₄ or Nd:YAG crystal to excite rare earth ions (Nd³⁺) to metastable energy levels.

(2) Q-switched pulse generation

Acousto-optic Q-switching (A-O Q-Switch) or electro-optic Q-switching (E-O Q-Switch) quickly switches the resonant cavity Q value, and releases high-power nanosecond pulses after accumulating energy.

(3) Wavelength conversion (optional)

Synchronous frequency generation (SHG) and triple frequency generation (THG) are performed through nonlinear crystals (such as LBO, KTP), and the output is 532 nm (green light) or 355 nm (ultraviolet light).

(4) Beam shaping & output

The output is optimized by a beam expander/focusing lens to ensure high energy density and processing accuracy.

3. Tüüpilised rakendused

(1) Precision machining

Cutting of brittle materials (glass, sapphire, ceramics).

Micro drilling (PCB, fuel injector, electronic components).

(2) Laser marking

High contrast metal marking (stainless steel, aluminum alloy).

Plastic/ceramic engraving (no thermal damage).

(3) Teaduslik uurimine ja katsetamine

LIBS (elemental analysis): high pulse energy excitation plasma.

Laser radar (LIDAR): atmospheric detection, ranging.

(4) Meditsiin ja ilu

Skin treatment (pigmentation removal, tattoo removal).

Dental hard tissue treatment (precision ablation).

4. Technical parameters (typical values)

Parameters EF20P-QSF (1064 nm) EF20P-QSF (532 nm)

Wavelength 1064 nm 532 nm (double frequency)

Average power 20 W 10 W

Single pulse energy 1 mJ (@20 kHz) 0.5 mJ (@20 kHz)

Repetition rate 1–200 kHz 1–200 kHz

Impulsi laius 10–50 ns 8–30 ns

Tala kvaliteet (M²) <1,3 <1,5

Jahutusmeetod Õhkjahutus/vesijahutus Õhkjahutus/vesijahutus

5. Comparison of competing products (EF20P-QSF vs. fiber/CO₂ laser)

Features EF20P-QSF (DPSS) Fiber laser CO₂ laser

Wavelength 1064/532/355 nm 1060–1080 nm 10.6 μm

Impulsienergia Kõrge (mJ tase) Madalam (µJ–mJ) Kõrge (kuid suure termilise mõjuga)

Tala kvaliteet M² <1,3 M² <1,1 M² ~1,2–2

Kohaldatavad materjalid Metall/mittemetall Metallipõhine mittemetall (plast/orgaaniline)

Maintenance requirements Low (no lamp pumping) Very low Need to adjust gas/lens

6. Advantages summary

High pulse energy: suitable for high impact processing (drilling, LIBS).

Suurepärane tala kvaliteet: täpne mikrotöötlus (M²<1,3).

Tööstusliku kvaliteediga stabiilsus: tahkiskonstruktsioon, pikk kasutusiga, hooldusvaba.

Multiple wavelengths available: 1064 nm/532 nm/355 nm, suitable for different materials.

Applicable industries: electronic manufacturing, scientific research experiments, medical beauty, aerospace, etc.